Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon
نویسندگان
چکیده
Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.
منابع مشابه
Determining the Parameters of Importance of a Graphene Synthesis Process Using Design-of-Experiments Method
A systematic method to identify key factors that control the synthesis of Physical Vapor Deposition (PVD)-based graphene on copper is necessary for engineering graphene growth. The statistical design-of-experiments method is employed and demonstrated in this work in order to fulfill the necessity. Full-factorial design-of-experiments are performed to examine the significance of the main effects...
متن کاملGraphene synthesis and characterization
All graphene was grown using standard literature methods on 25 μm thick Cu foils, as indicated in the main text. Prior to G, Cu substrates were annealed at T = 1000 oC in an H2 environment for ~1 hour. CH4 was then introduced for 10 minutes in order to synthesize graphene, after which the reactor was cooled to room temperature. This anneal was not performed for G growths (except for the sample ...
متن کاملFast and Non-Catalytic Growth of Transparent & Conductive Graphene-Like Carbon Films on Glass at Low Temperature
This article presents the synthesis and systematic study on graphene-like carbon thin films directly grown on commercial glass by using remote-ECR Plasma Assisted CVD. The fabrication process is extremely rapid and performed on to 2 inch scale dielectric substrate at relatively low temperature (< 550oC) without using metal catalyst. This method avoids damaging and expensive transfer processes o...
متن کاملVisualizing copper assisted graphene growth in nanoscale
Control synthesis of high quality large-area graphene on transition metals (TMs) by chemical vapor deposition (CVD) is the most fascinating approach for practical device applications. Interaction of carbon atoms and TMs is quite critical to obtain graphene with precise layer number, crystal size and structure. Here, we reveal a solid phase reaction process to achieve Cu assisted graphene growth...
متن کامل